Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X
to
Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10708EJ01V0DS (1st edition)
Date Published February
2008
NS
FEATURES
?
Super low noise figure,
high associated gain
and middle output power
NF = 0.3
dB TYP., Ga
= 12.5
dB TYP. @
f = 12 GHz,
VDS
= 2 V, ID
= 10 mA
PO(1dB)
= +14 dBm TYP. @
f = 12 GHz,
VDS
= 3 V, ID
= 25 mA set (Non-RF)
?
Micro-X plastic (S02) package
APPLICATIONS
?
X
to Ku-band local buffer amplifier, PA driver amplifier,
low noise amplifier, mixer
?
DBS LNB, VSAT
?
Other X
to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3515S02-T1C
NE3515S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
G
? 8 mm wide embossed taping
? Pin 4
(Gate) faces
the perforation side
of the tape
NE3515S02-T1D
NE3515S02-T1D-A
10 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales of
fice.
Part number for sample order:
NE3515S02-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
?3
V
Drain
Current
ID
IDSS
mA
Gate
Current
IG
100
?A
Total Power Dissipation
Ptot
Note
165
mW
Channel
Temperature
Tch
+125
?C
Storage Temperature
Tstg
?65 to +125
?C
Note
Mounted on 1.08 cm
2
?
1.0 mm (t) glass epoxy PCB
发布紧急采购，3分钟左右您将得到回复。
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